? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 2.4 a i dm t c = 25 c, pulse width limited by t jm 6a i a t c = 25 c 2.4 a e as t c = 25 c 200 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 125 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220, to-247) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds99873a (04/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1200 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 50 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 300 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 6.5 7.5 polar tm power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density IXTA2R4N120P ixth2r4n120p ixtp2r4n120p v dss = 1200v i d25 = 2.4a r ds(on) 7.5 applications: z high voltage switched-mode and resonant-mode power supplies z high voltage pulse power applications z high voltage discharge circuits in lasers pulsers, spark igniters, rf generators z high voltage dc-dc converters z high voltage dc-ac inverters g s (tab) to-263 (i xta ) to-220 (i xtp ) d (tab) g s to-247 (ixth) g d s (tab) g = gate d = drain s = source tab = drain
ixys reserves the right to change limits, test conditions, and dimensions. IXTA2R4N120P ixtp2r4n120p ixth2r4n120p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 1.2 2.0 s c iss 1207 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 57 pf c rss 11.2 pf t d(on) resistive switching times 22 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 ns t d(off) r g = 18 (external) 70 ns t f 32 ns q g(on) 37 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 6 nc q gd 20 nc r thjc 1.0 c/w r thcs (to-220) 0.50 c/w (to-247) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 2.4 a i sm repetitive, pulse width limited by t jm 7.2 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr i f = 2.4a, -di/dt = 100a/ s, v r = 100v, v gs = 0v 920 ns note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2008 ixys corporation, all rights reserved IXTA2R4N120P ixtp2r4n120p ixth2r4n120p fig. 1. output characteristics @ 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 024681012141618 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0 2 4 6 8 1012141618202224262830 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ 125oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 5 10 15 20 25 30 35 40 45 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 1.2a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 2.4a i d = 1.2a fig. 5. r ds(on) normalized to i d = 1.2a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA2R4N120P ixtp2r4n120p ixth2r4n120p ixys ref: t_2r4n120p(3c) 4-02-08-a fig. 7. input admittance 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 8 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 600v i d = 1.2a i g = 10ma fig. 11. capacitance 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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